A 47 GHz bipolar process with an ultra shallow ion implanted base of 35 nm

Author

Mahnkopf, R. ; Bianco, M. ; Klose, H.

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

821

Lastpage

824

Abstract

Based on the bipolar process B6HF/1/l a scaled down version-further on denoted as B6HF*-was developed featuring 47 GHz cutoff-frequency for a 0.3 /spl mu/m effective emitter size transistor. To obtain this performance aggressive implantation and thermal budget strategies had been set up. The transistor base width has been reduced down to 35 nm, the lowest value ever reported for a conventional implanted base. Investigations with respect to process and device stability.<>

Keywords

BiCMOS integrated circuits; hybrid integrated circuits; integrated circuit manufacture; ion implantation; 0.3 /spl mu/m effective emitter size transistor; 0.3 mum; 35 nm; 47 GHz bipolar process; 47 GHz cutoff-frequency; BiCMOS IC fabrication; aggressive implantation; bipolar process; device stability; thermal budget strategies; transistor base width; ultra shallow ion implanted base; Batteries; CMOS process; Delay; Energy consumption; Implants; Ion implantation; Metallization; Rapid thermal processing; Research and development; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383298

Filename

383298