An SOI based integrated gate-drivers for automotive application

Author

Toshiyuki, K. ; Hiya, Y. ; Kinoshita, K. ; Tomita, H. ; Hoshikawa, N.

Author_Institution

Electron. Dev. Div. 3, Toyota Motor Corp., Toyota, Japan

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

2

Abstract

This paper presents our recent development of an ASIC for automotive application. With the progress of automotive electronics, there is increasing need for high temperature and high voltage operation. The ASIC for the EPS applications was integrated with a boost gate driver, three-phase inverter drivers and their components. The ASIC was designed and fabricated using SOI-BiCD process which can operate at the maximum voltage of 80V and at temperature from -40°C to 175°C.

Keywords

automotive electronics; driver circuits; high-temperature electronics; invertors; silicon-on-insulator; ASIC; EPS applications; SOI-BiCD process; automotive electronics; boost gate driver; electric power steering; high temperature operation; high voltage operation; integrated gate-drivers; temperature -40 degC to 175 degC; three-phase inverter drivers; Application specific integrated circuits; Automotive applications; Brushless motors; Logic gates; Switches; Vehicles; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028209

Filename

7028209