DocumentCode
252544
Title
Piezoresistivity in unstrained and strained SOI MOSFETs
Author
Berthelon, R. ; Casse, M. ; Rideau, D. ; Nier, O. ; Andrieu, F. ; Vincent, E. ; Reimbold, G.
Author_Institution
Leti, CEA, Grenoble, France
fYear
2014
fDate
6-9 Oct. 2014
Firstpage
1
Lastpage
2
Abstract
We hereby present the extraction and the study of piezoresistive (PR) coefficients in MOSFETs built on unstrained and strained SOI substrates. We have evidenced a strong dependence of these PR with the inversion charge density in particular for PMOS. These results are well explained by the Si bandstructure calculation which enlightens the effect of the strain and of the electric confinement on carrier mobility, up to high tensile strain values.
Keywords
MOSFET; piezoresistance; piezoresistive devices; silicon; silicon-on-insulator; substrates; PMOS; PR coefficient; SOI substrate; Si; bandstructure calculation; carrier mobility; electric confinement; inversion charge density; piezoresistivity; strained silicon on insulator metal oxide semiconductor field effect transistor; tensile strain value; unstrained SOI MOSFET; MOS devices; Piezoresistance; Silicon; Stress; Substrates; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location
Millbrae, CA
Type
conf
DOI
10.1109/S3S.2014.7028213
Filename
7028213
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