• DocumentCode
    252547
  • Title

    In depth characterization of hole transport in 14nm FD-SOI pMOS devices

  • Author

    Shin, M. ; Shi, M. ; Mouis, M. ; Cros, A. ; Josse, E. ; Kim, G.T. ; Ghibaudo, G.

  • Author_Institution
    IMEP-LAHC, Grenoble INP, Grenoble, France
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.
  • Keywords
    MIS devices; silicon-on-insulator; FD-SOI pMOS devices; back biasing; coupling condition; hole transport; mobility enhancement; scattering mechanisms; short channel devices degradation; size 14 nm; temperature 77 K to 300 K; Couplings; High K dielectric materials; Logic gates; MOS devices; Phonons; Scattering; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
  • Conference_Location
    Millbrae, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2014.7028215
  • Filename
    7028215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=252547