Key properties in PbSrSe thin films and PbSe/PbSrSe quantum wells for mid-infrared optoelectronic applications

Author

Shen, W.Z. ; Jiang, L.F. ; Yang, H.F. ; Shen, S.C.

Author_Institution

Dept. of Phys., Shanghai Jiao Tong Univ., China

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

327

Lastpage

328

Abstract

We review our recent investigations on PbSrSe thin film and PbSe/PbSrSe quantum well structures grown by MBE techniques for MIR optoelectronic applications. The band structures, effective mass, phonon behaviour, refractive indices etc, have been investigated by IR absorption and PL spectroscopies under different compositions, temperatures and structures, and combined with some model calculations.

Keywords

IV-VI semiconductors; effective mass; infrared detectors; infrared spectra; lead compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; refractive index; semiconductor growth; semiconductor quantum wells; semiconductor thin films; strontium compounds; IR absorption spectroscopy; MBE growth; PL spectroscopy; PbSe-PbSrSe; PbSe/PbSrSe quantum wells; PbSrSe; PbSrSe thin films; band structures; effective mass; infrared detectors; infrared lasers; mid-infrared optoelectronic applications; model calculations; phonon behaviour; refractive indices; Effective mass; Infrared detectors; Lead; Molecular beam epitaxial growth; Optical refraction; Optical scattering; Phonons; Quantum well devices; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076217

Filename

1076217