Electron-hole bilayer deep subthermal electronic switch: Physics, promise and challenges

Author

Ionescu, A.M. ; Alper, C. ; Padilla, J.L. ; Lattanzio, L. ; Palestri, P.

Author_Institution

NANOLAB, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

This paper overviews the physics and promised performance of electron hole bilayer TFETs (EHBTFET) as deep subthermal electronic switch for ultra-low voltage operation. We provide a first complete roadmap for optimizing its design for combined high performance and low leakage. Based on advanced quantum mechanical (QM) simulation methods, it is shown that the major issue with the EHBTFET is the wavefunction (WF) penetration into the underlap region. Various solutions with different varying complexity are proposed and it is shown that steep slope (SS≪60mV/dec) over a few decades of drain current can be attained using these solutions..

Keywords

field effect transistor switches; tunnel transistors; EHBTFET; QM simulation; WF penetration; deep subthermal electronic switch; drain current; electron hole bilayer TFET; quantum mechanical simulation method; roadmapping; ultralow voltage operation; underlap region; wavefunction penetration; Charge carrier processes; Leakage currents; Logic gates; Photonic band gap; Silicon; Tunneling; EHBTFET; low leakage; quantum mechanical simulation; subthermal electronic switch;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028227

Filename

7028227