Nitrogen in-situ doped poly buffer LOCOS: simple and scalable isolation technology for deep-submicron silicon devices

Author

Kobayashi, T. ; Nakayama, S. ; Miyake, M. ; Okazaki, Y.

Author_Institution

NTT LSI Labs., Atsugi, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

683

Lastpage

686

Abstract

Novel LOCOS (LOCal Oxidation of Silicon) technology has been developed, that uses nitrogen in-situ doped amorphous-Si as a buffer layer instead of the non-doped poly-Si used in conventional Poly Buffered LOCOS (PBL). This technology makes it possible to use a thin pad oxide of 6 nm and improves edge morphology and effective dimension loss. Therefore, the technology will be used in advanced LSI fabrication with KrF lithography, notwithstanding that the number of processing steps is the same as conventional PBL.<>

Keywords

CMOS integrated circuits; MOSFET; integrated circuit technology; isolation technology; nanotechnology; oxidation; 6 nm; KrF lithography; LSI fabrication; Si:N-SiO/sub 2/; buffer layer; deep-submicron CMOS; doped amorphous-Si; edge morphology; effective dimension loss; electrical isolation characteristics; in-situ N doping; junction integrity; n-channel MOSFET; p-channel MOSFET; poly buffer LOCOS; scalable isolation technology; thin pad oxide; Buffer layers; CMOS technology; Costs; Etching; Fabrication; Isolation technology; Large scale integration; Nitrogen; Oxidation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383320

Filename

383320