Fully integrated 2-GHz LNA with on-chip matching for multi-standard mobile receiver using 0.18 μm CMOS technology

Author

Mustaffa, Mohd Tafir ; Zayegh, Aladin ; Veljanovski, Ronny ; Stojcevksi, Alex ; Zulkifli, Tun Zainal Azni

Author_Institution

Sch. of Electr. Eng., Victoria Univ., Melbourne, VIC

fYear

2008

fDate

19-21 Nov. 2008

Firstpage

1

Lastpage

5

Abstract

A single-ended wideband low noise amplifier (LNA) for GSM (DCS1800, PCS1900) and WCDMA (Band I to IV) were designed and implemented using 0.18 mum CMOS technology. The circuit topology is based on inductively-degenerated common-source (IDCS) using on-chip inductors at the input circuit for input matching and shunt-peaking components for bandwidth enhancement at load tank. Post layout simulation results shows a power gain of 24-dB, a noise figure of 2.26-dB and an input return loss well below -10-dB at the center frequency of 2-GHz. The LNA draws 6.8-mA from a single 1.8-V power supply.

Keywords

CMOS integrated circuits; cellular radio; code division multiple access; inductors; low noise amplifiers; network topology; radio receivers; CMOS technology; GSM; WCDMA; bandwidth enhancement; circuit topology; frequency 2 GHz; inductively-degenerated common-source; load tank; multistandard mobile receiver; on-chip inductor; on-chip matching; shunt-peaking component; single-ended wideband low noise amplifier; size 0.18 mum; Bandwidth; Broadband amplifiers; CMOS technology; Circuit topology; GSM; Impedance matching; Inductors; Integrated circuit technology; Low-noise amplifiers; Multiaccess communication; GSM; Low noise amplifier (LNA); WCDMA; inductively degenerated common source (IDCS); wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2008 - 2008 IEEE Region 10 Conference

Conference_Location

Hyderabad

Print_ISBN

978-1-4244-2408-5

Electronic_ISBN

978-1-4244-2409-2

Type

conf

DOI

10.1109/TENCON.2008.4766481

Filename

4766481