High performance K-band MEMS switches

This paper presents a comparison of the design, construction, and performance of broadband RF MEMS switches operating in the K-band from DC to 26.5 GHz and DC to 35 GHz. Both devices exploit proven elements from previous DC -7 GHz SPDT MEMS switch designs. Two different switch configurations have been investigated to address RF resonance deficiencies, including one with a modified switch contact structure. Prototype samples of the both switch structures have demonstrated outstanding electrical performance, from DC to 26.5 GHz and from DC to 35 GHz, with less than 0.4 dB insertion loss, more than 20 dB return loss, and 20 dB isolation (all at 20 GHz).