±0.5V BiCMOS class-A and class-AB Current Conveyor structures

Author

Thankachan, Subodh ; Pattanaik, Manisha ; Rajput, S.S.

Author_Institution

ABV-Indian Inst. of Inf. Technol. & Manage., Gwalior

fYear

2008

fDate

19-21 Nov. 2008

Firstpage

1

Lastpage

6

Abstract

In this paper, a new CCII, capable of operate at plusmn0.5 V and having wide dynamic range with achieved bandwidth of 480 MHz have been proposed. Two new CCCIIs, with class-A and class-AB operations, capable of operating at plusmn0.5 V and having wide dynamic range with achieved bandwidth of 430 MHz and 140 MHz, has been design and proposed from the CCII. The structures have been found to be insensitive to the threshold voltage variations. The proposed circuits are suitable for implementation using 0.25 mum BiCMOS technology. Pspice simulations confirm the performance of the proposed structure.

Keywords

BiCMOS integrated circuits; current conveyors; BiCMOS; Pspice simulations; bandwidth 140 MHz; bandwidth 480 MHz; class-A current conveyor; class-AB current conveyor; size 0.25 mum; voltage -0.5 V to 0.5 V; Bandwidth; BiCMOS integrated circuits; Bipolar transistors; Dynamic range; Energy consumption; Frequency; Impedance; Low voltage; Power MOSFET; Threshold voltage; BiCMOS; Compound current conveyor; Current conveyor; Low supply voltage; Threshold voltage variation;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2008 - 2008 IEEE Region 10 Conference

Conference_Location

Hyderabad

Print_ISBN

978-1-4244-2408-5

Electronic_ISBN

978-1-4244-2409-2

Type

conf

DOI

10.1109/TENCON.2008.4766495

Filename

4766495