Physical and electrical modeling of bonding wires up to 110 GHz

Author

Descharles, C. ; Algani, C. ; Mercier, B. ; Alquie, Georges

Author_Institution

Lab. des Instruments et Systemes d´´Ile-de-France, Univ. Pierre et Marie Curie, Paris, France

Volume

2

fYear

2003

fDate

7-9 Oct. 2003

Firstpage

639

Abstract

This paper presents an electrical model of bonding wire effects. This model fits in Ka to W bands and it can be easily used in an electrical simulator. It takes into account the different coupling effects which appear in such structures and uses analytical formulas to calculate the components of the equivalent circuit. This bonding wire electrical model has been validated by comparing it to 3D electromagnetic simulations and measures. Bonding wire structures have realized with a MEMs technique developed on a silicon substrate and they have been characterized up to 110 GHz. The model and the results of simulations and measures are presented and prove that the bonding wire technique can be used in the millimeter wave band.

Keywords

circuit simulation; equivalent circuits; integrated circuit bonding; micromechanical devices; modelling; 3D electromagnetic simulations; Ka bands; MEMs; W bands; analytical formulas; bonding wire effects; bonding wire electrical model; bonding wire structures; coupling effects; electrical modeling; electrical simulator; equivalent circuit; millimeter wave band; physical modeling; silicon substrate; Bonding; Circuit simulation; Coupling circuits; Electric variables measurement; Electromagnetic measurements; Electromagnetic modeling; Equivalent circuits; Millimeter wave measurements; Silicon; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2003. 33rd European

Print_ISBN

1-58053-834-7

Type

conf

DOI

10.1109/EUMC.2003.1262971

Filename

1262971