Monte Carlo simulation of electron heating in scaled deep submicron MOSFETs

Author

Venturi, F. ; Sangiorgi, E. ; Brunetti, R. ; Jacoboni, C. ; Ricco, B.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

485

Lastpage

488

Abstract

The effects of device scaling on electron heating and intrinsic device performance in deep submicron n-MOSFETs are investigated by means of a Monte Carlo device simulator featuring an original model for electron transport at high electric fields. It is shown that linear voltage scaling is too conservative for future deep submicron technologies, at least from the point of view of electron heating; in fact, weaker supply reductions (for example, designed for constant maximum lateral electric field) provide better device performance with no increase of hot electron effects.<>

Keywords

Monte Carlo methods; hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFETs; Monte Carlo device simulator; deep submicron devices; device scaling; electron heating; electron transport; high electric fields; hot electron effects; intrinsic device performance; lateral electric field; linear voltage scaling; n-type; weaker supply reductions; Acoustic scattering; Brillouin scattering; Computational modeling; Electrons; Heating; MOSFETs; Monte Carlo methods; Optical scattering; Physics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74327

Filename

74327