DocumentCode
2526833
Title
Technology trends of silicon-on-insulator-its advantages and problems to be solved
Author
Yoshimi, M. ; Terauchi, M. ; Murakoshi, A. ; Takahashi, M. ; Matsuzawa, K. ; Shigyo, N. ; Ushiku, Y.
Author_Institution
ULSI Res. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
429
Lastpage
432
Abstract
Recent progress in SOI technology is reviewed and problems which need be solved are discussed. Emphasis is placed on the substrate floating effect, for which the bandgap engineering method is proposed for the first time. It is demonstrated that Si-Ge formation in the source region can improve the drain breakdown voltage significantly.<>
Keywords
electric breakdown; integrated circuit technology; silicon-on-insulator; SOI technology; Si; Si-Ge formation; SiGe; bandgap engineering method; drain breakdown voltage; source region; substrate floating effect; technology trends; Breakdown voltage; Laboratories; Logic; Low voltage; Multimedia systems; Photonic band gap; Random access memory; Research and development; Silicon on insulator technology; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383376
Filename
383376
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