High-temperature GaN/SiC heterojunction bipolar transistor with high gain

Author

Pankove, J. ; Chang, S.S. ; Lee, H.C. ; Molnar, R.J. ; Moustakas, T.D. ; Van Zeghbroeck, B.

Author_Institution

Astralux Inc., Boulder, CO, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

389

Lastpage

392

Abstract

A new high temperature heterojunction bipolar transistor (HBT) with a current gain as high as 100,000 has been fabricated. This HBT utilizes GaN for the emitter and SiC for the base and collector. The devices exhibit near ideal current-voltage characteristics, as demonstrated by their high current gain along with the absence of any observable Early effect, with the exception of high leakage currents at voltages above 10 V. High temperature operation has been demonstrated up to 260/spl deg/C with minimal degradation in output, except for an increase in leakage currents.<>

Keywords

III-V semiconductors; gallium compounds; heterojunction bipolar transistors; leakage currents; semiconductor materials; silicon compounds; 260 degC; GaN-SiC; GaN/SiC; current gain; heterojunction bipolar transistor; high temperature HBT; leakage currents; near ideal current-voltage characteristics; output degradation; Conducting materials; Electron emission; Gallium nitride; Heterojunction bipolar transistors; Leakage current; Nitrogen; Photonic band gap; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383385

Filename

383385