Charge injection transistors and logic elements in Si/Si/sub 1-x/Ge/sub x/ heterostructures

Author

Mastrapasqua, M. ; King, C.A. ; Smith, P.R. ; Pinto, M.R.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

385

Lastpage

388

Abstract

Charge injection transistors and logic elements have been successfully implemented in a Si/Si/sub 0.7/Ge/sub 0.3/ heterostructure grown by rapid thermal epitaxy on a Si substrate. Shallow p+ source and drain ohmic contacts are obtained by a boron diffusion from a selectively deposited boron doped Ge layer. Room temperature operation of the charge injection transistor is demonstrated for the first time. High frequency measurements indicate a short circuit current gain cutoff frequency of 6 GHz.<>

Keywords

Ge-Si alloys; charge-coupled devices; elemental semiconductors; logic devices; ohmic contacts; rapid thermal processing; semiconductor materials; silicon; vapour phase epitaxial growth; 6 GHz; Si-SiGe; Si/Si/sub 1-x/Ge/sub x/ heterostructures; charge injection transistors; current gain cutoff frequency; high frequency measurements; logic elements; ohmic contacts; rapid thermal epitaxy; room temperature operation; short circuit current; Boron; Epitaxial growth; FETs; Hot carriers; Logic; Ohmic contacts; Substrates; Temperature; Virtual colonoscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383386

Filename

383386