A novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

Author

Carns, T.K. ; Zheng, X. ; Wang, K.L.

Author_Institution

Device Res. Lab., California Univ., Los Angeles, CA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

381

Lastpage

384

Abstract

A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type /spl delta/-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM´s and high density of DRAM´s.<>

Keywords

Ge-Si alloys; SRAM chips; doping profiles; elemental semiconductors; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; silicon; tunnel diodes; GeSi-Si; GeSi/Si superlattice; bistable GeSi/Si tunnel diode; bistable characteristic; high density SRAM cell; high speed SRAM cell; n-type /spl delta/-doped layers; p-type /spl delta/-doped layers; quantum well tunnel diode; static RAM; three element SRAM cell; Diodes; Electrons; Germanium silicon alloys; MOSFET circuits; Molecular beam epitaxial growth; Random access memory; Silicon germanium; Superlattices; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383387

Filename

383387