Multi emitter finger SiGe-HBTs with f/sub max/ up to 120 GHz

Author

Schuppen, A. ; Gruhle, A. ; Erben, U. ; Kibbel, H. ; Konig, U.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

377

Lastpage

380

Abstract

Multi emitter finger silicon germanium heterojunction bipolar transistors (SiGe-HBTs) grown by MBE have been investigated by varying the collector design. No current crush effects have been observed for different transistor geometries. SiGe-HBTs with a 400 nm 2/spl times/10/sup 16/ cm/sup -3/ doped collector layers and 10 emitter fingers of 1 /spl mu/m/spl times/10 /spl mu/m exhibit a maximum oscillation frequency of 120 GHz and a power gain of 20 dB at 10 GHz. These are presently the highest values reported for silicon based transistors.<>

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; molecular beam epitaxial growth; power bipolar transistors; semiconductor materials; 10 GHz; 120 GHz; 20 dB; EHF; HBT; MBE growth; SHF; SiGe; collector design variation; doped collector layers; heterojunction bipolar transistors; maximum oscillation frequency; multiemitter finger type; power gain; transistor geometries; Circuits; Doping; Electron devices; Etching; Fingers; Frequency; Gain; Germanium silicon alloys; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383388

Filename

383388