Strain dependence of the performance enhancement in strained-Si n-MOSFETs

Author

Welser, J. ; Hoyt, J.L. ; Takagi, S. ; Gibbons, J.F.

Author_Institution

Solid State Electron. Lab., Stanford Univ., CA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

373

Lastpage

376

Abstract

The first measurements of the strain dependence of the electron mobility enhancement in n-MOSFETs employing tensilely-strained Si channels are reported. For pseudomorphic Si films grown on relaxed-Si/sub 1-x/Ge/sub x/ layers, the mobility enhancement ratio is found to saturate at approximately 1.76 at room temperature for x on the order of 0.20. As the temperature is lowered, the mobility enhancements for all strain levels initially converge, and subsequently decrease, with no enhancement observed at cryogenic temperatures (/spl ap/5 K). Similar behavior is seen at higher drain fields in the device transconductance.<>

Keywords

Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; semiconductor materials; silicon; Si-SiGe; device transconductance; drain fields; electron mobility enhancement; mobility enhancement ratio; performance enhancement; pseudomorphic Si films; relaxed-Si/sub 1-x/Ge/sub x/ layers; strain dependence; strained-Si n-MOSFETs; tensilely-strained Si channels; Buffer layers; Capacitive sensors; Electron mobility; Laboratories; MOSFET circuits; Raman scattering; Semiconductor films; Strain measurement; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383389

Filename

383389