DocumentCode
2527107
Title
Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs
Author
Flucke, J. ; Meliani, C. ; Schnieder, F. ; Heinrich, W.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
639
Lastpage
642
Abstract
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.
Keywords
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium compounds; power HEMT; wide band gap semiconductors; GaN; GaN-HEMT; class-E hybrid power amplifier; drain efficiency; efficiency 57 percent; frequency 2 GHz; large-signal simulation considerations; Circuits; Design methodology; Frequency; Gallium nitride; HEMTs; Impedance matching; Microwave amplifiers; Operational amplifiers; Packaging; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412794
Filename
4412794
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