• DocumentCode
    2527147
  • Title

    Distribution regularity of breakdown field strength of high voltage ceramic capacitor

  • Author

    Bin, Liu ; Wei, Chen ; Yajie, Zhang ; Shoutian, Chen

  • Author_Institution
    State Key Lab. of Electr. Insulation for Power Equipment, Xi´´an Jiaotong Univ., China
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1037
  • Abstract
    Electrical breakdown tests on high voltage ceramic capacitors, whose ceramic disks were in two kind of geometry, were carried out under various rates of voltage rise. It was shown that the breakdown field strength of samples in the same form displayed a Weibull distribution for the same rate of voltage rise. With increasing rate, the slope and character strength of the Weibull line improved in the flat samples, but was unchanged in concave samples. In the mean time, the mechanical strength of the ceramic material used in the capacitor was examined and obeyed the Weibull distribution. The Weibull line slope of mechanical strength was nearly same as that of the breakdown strength of concave samples. We concluded that the alternative breakdown of high permittivity ceramic happens when the degree of discharge at weak points exceeds some certain amount. The weak points are the voids and cracks contained in the ceramic, and the discharge at those weak points and electric-mechanical stress seem to be the main sources of electrical breakdown
  • Keywords
    Weibull distribution; ceramic capacitors; cracks; electric breakdown; mechanical strength; power capacitors; voids (solid); SrPbTiO3-Bi2O3-TiO2; Weibull distribution; Weibull line slope; alternative breakdown; breakdown field strength; ceramic disks; ceramic material; concave samples; cracks; distribution regularity; electric-mechanical stress; electrical breakdown tests; flat samples; high permittivity ceramic; high voltage ceramic capacitor; mechanical strength; voids; voltage rise rate; weak points; Breakdown voltage; Capacitors; Ceramics; Electric breakdown; Fault location; Geometry; Permittivity; Stress; Testing; Weibull distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    0-7803-5459-1
  • Type

    conf

  • DOI
    10.1109/ICPADM.2000.876410
  • Filename
    876410