• DocumentCode
    2527264
  • Title

    Nanoelectronics: From silicon to graphene

  • Author

    Schwalke, Udo ; Wessely, Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine

  • Author_Institution
    Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
  • fYear
    2012
  • fDate
    16-18 May 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.
  • Keywords
    carbon nanotube field effect transistors; elemental semiconductors; graphene; nanoelectronics; silicon; active device; carbon nanotube field-effect transistor; graphene-based transistor; high performance electronic device; memory cell; nanoelectronics; silicon based device; CNTFETs; Carbon; Carbon nanotubes; Fabrication; Nanoscale devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on
  • Conference_Location
    Gammarth
  • Print_ISBN
    978-1-4673-1926-3
  • Type

    conf

  • DOI
    10.1109/DTIS.2012.6232951
  • Filename
    6232951