DocumentCode
2527519
Title
Reliable metal-to-metal oxide antifuses
Author
Zhang, G. ; Hu, C. ; Yu, P. ; Chiang, S. ; Eltoukhy, S. ; Hamdy, E.
Author_Institution
Dept. of Phys., California Univ., Berkeley, CA, USA
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
281
Lastpage
284
Abstract
This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.<>
Keywords
MIM devices; PLD programming; PROM; VLSI; electric fuses; integrated memory circuits; metal-insulator boundaries; programmable logic arrays; reliability; thermal analysis; thermal conductivity; electro-thermal model; high performance type; low thermal conductivity metals; metal-to-metal antifuse; metal-to-metal oxide antifuses; reliable antifuses; thin oxide; Conducting materials; Dielectrics and electrical insulation; Electric breakdown; Electrodes; High performance computing; Physics computing; Temperature; Thermal conductivity; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383412
Filename
383412
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