E-beam re-aligned HBTs and a new broadband MMIC power amplifier using bathtub as heat sink

Author

Yang, L.W. ; Komiak, J.J. ; Kao, M.Y. ; Houston, D.E. ; Smith, D.P. ; Norheden, K.J.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

203

Lastpage

206

Abstract

A benchmark X-band AlGaAs-GaAs HBT MMIC power amplifier with 7 W output power, 14 dB gain and greater than 50% efficiency has been fabricated using a base-to-emitter re-aligned approach based on an electron-beam, direct-write technique. A novel flipside bathtub and metallization technology provides a practical means to reduce the thermal resistance of HBT cells and greatly enhance the microwave power performance.<>

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heat sinks; heterojunction bipolar transistors; integrated circuit metallisation; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; thermal resistance; wideband amplifiers; 14 dB; 4 GHz; 50 percent; 7 W; 7 to 11 GHz; AlGaAs-GaAs; E-beam re-aligned HBTs; HBT MMIC; X-band; base-to-emitter re-aligned approach; bathtub heat sink; broadband MMIC power amplifier; electron-beam direct-write technique; flipside bathtub; metallization technology; microwave power performance; thermal resistance; Broadband amplifiers; Electromagnetic heating; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; MMICs; Microwave technology; Power amplifiers; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383430

Filename

383430