A relaxation time approach to model the non-quasi-static transient effects in MOSFETs

Author

Mansun Chan ; Kelvin Hui ; Neff, R. ; Chenming Hu ; Ping Keung Ko

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

169

Lastpage

172

Abstract

A relaxation time approach is used to model the non quasi-static effect of MOS circuits in transient analysis. Unlike the existing quasi-static models, the new model takes care of the finite charging time of the channel to reach equilibrium instantaneous channel charge re-distribution, and velocity saturation, giving more realistic and accurate results. The model has been implemented in SPICE and the simulation time penalty is less than 50%.<>

Keywords

MOS integrated circuits; MOSFET; SPICE; circuit analysis computing; integrated circuit modelling; semiconductor device models; transient analysis; MOS circuits; MOSFETs; SPICE; equilibrium instantaneous channel charge re-distribution; finite charging time; model; nonquasi-static transient effects; relaxation time approach; transient analysis; velocity saturation; Circuit optimization; Circuit simulation; Cutoff frequency; Equivalent circuits; Frequency domain analysis; Kelvin; MOSFETs; Power system transients; SPICE; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383438

Filename

383438