Optimization of silicon solar cell emitters for maximum cell efficiency

Author

Demesmaeker, E. ; Ghannam, M. ; Moreno, E.G. ; Nijs, J. ; Mertens, R.

Author_Institution

Interuniversitair Micro-Elektronica Centrum, Leuven, Belgium

fYear

1991

fDate

7-11 Oct 1991

Firstpage

415

Abstract

The optimum efficiency of n⁺p silicon solar cells is determined, taking into account the different factors affecting the photogenerated current, open-circuit voltage, and fill factor. Saturation currents and photogenerated currents are calculated for cells with a Gaussian emitter doping profile. Geometrical and resistive factors are linked to the electrical data, and an optimum design for the front side contact is obtained. Contours of constant optimum efficiency are given. These contours represent a practical tool for determining the optimum efficiency resulting from a particular technology or designing the best technology for a predetermined value of efficiency

Keywords

elemental semiconductors; optimisation; semiconductor device models; silicon; solar cells; Gaussian emitter doping profile; Si solar cells; efficiency; emitters; fill factor; front side contact; open-circuit voltage; optimisation; photogenerated current; semiconductor device models; Circuits; Contact resistance; Doping profiles; Magneto electrical resistivity imaging technique; Photoconductivity; Photovoltaic cells; Radiative recombination; Silicon; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169249

Filename

169249