Effect of Thin Aluminum Layer on Fabricating Silicon Micro Cone Structures

Author

Yoshimura, Hiroaki ; Kanakusa, Hiroaki ; Nakazawa, Kazuki ; Hatta, Akimitsu

Author_Institution

Dept. of Electron. & Photonic Syst. Eng., Kochi Univ. of Technol., Kami

Volume

2

fYear

2006

fDate

25-29 Sept. 2006

Firstpage

817

Lastpage

820

Abstract

A unique technique of the fabricating sub micron sized silicon (Si) cones structure has been found. (Yoshimura, 2002) The technique consists of two processes: 1) depositing fine metal particles or layer, 2) etching in microwave plasma with negatively bias. A size distribution of unevenness on the surface of deposited aluminum (Al) layer was observed from samples after several minutes etching. A similar distribution of the cone shaped products were observed from 60 minutes etched samples also. The change of shape of the unevenness and cone shaped products under varied etching time was observed by using FE-SEM. The EDX spectrum of Al vs. Si was observed. In this paper, the relationship of distribution between the unevenness on Al layer and size of the cone products will be presented

Keywords

X-ray chemical analysis; aluminium; crystal microstructure; scanning electron microscopy; silicon; EDX spectrum; FE-SEM; cone shaped products; deposited aluminum; etching; fine metal particles; microwave plasma; silicon micro cone structures; thin aluminum layer; Aluminum; Cathodes; Dry etching; Microwave theory and techniques; Plasma applications; Plasma chemistry; Plasma materials processing; Shape; Silicon; Sliding mode control;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum, 2006. ISDEIV '06. International Symposium on

Conference_Location

Matsue

ISSN

1093-2941

Print_ISBN

1-4244-0191-7

Electronic_ISBN

1093-2941

Type

conf

DOI

10.1109/DEIV.2006.357428

Filename

4195009