Polytype heterostructures for electron tunneling devices

Author

Beresford, R. ; Luo, L.F. ; Longenbach, K. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

547

Lastpage

550

Abstract

Polytype heterostructures of InAs-AlSb-GaSb exhibit interband tunneling due to the approximately 0.1-eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism for negative differential resistance that has potential applications in high-speed devices. Nonresonant and resonant interband tunneling has been demonstrated, achieving peak-to-valley ratios at low temperature greater than 5:1 in single-barrier devices and greater than 60:1 in double-barrier devices. It is shown that distinct negative differential resistance characteristics can be obtained for thin (>

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; indium compounds; negative resistance; resonant tunnelling devices; semiconductor device models; semiconductor quantum wells; solid-state microwave devices; tunnelling; 200 GHz; EHF; GaSb valence band; InAs conduction band; InAs quantum wells; InAs-AlSb-GaSb; MM-wave devices; broken-gap configuration; current-voltage characteristics; double-barrier devices; electron tunneling devices; equivalent circuit model; high-speed devices; interband tunneling; millimetre wave operation; negative differential resistance; nonresonant tunnelling; peak-to-valley ratios; polytype heterostructures; resonant interband tunneling; resonant tunneling transistor; single-barrier devices; Conducting materials; Diodes; Doping; Electrons; Frequency; Gallium arsenide; Photonic band gap; Resonance; Resonant tunneling devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74341

Filename

74341