Power QFN down bond lift and delamination study

Author

Hanmin Zhang ; Hu, M. ; Wang, S. ; Ilko, S. ; Yin, B.G. ; He, Q.C. ; Ye, D.H.

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2014

fDate

3-5 Dec. 2014

Firstpage

570

Lastpage

573

Abstract

The PQFN device revealed down bond lift and delamination issues. Based on AES (Auger Electron Spectroscopy), XPS (X-ray Photoelectron Spectroscopy) and FTIR (Fourier Transform Infrared Spectroscopy) analysis it was possible to verify that a down bond contamination caused the failure. Cross sections of down bond wire for the failed unit showed a broken heel on the down bond. Furthermore, cracking between molding compound and lead frame was found. It was proven that the delamination caused the down bond lift and the broken heel. FEA (Finite Element Analysis) revealed that the delamination can lead to shear stress increase at the down bond heel.

Keywords

Auger electron spectra; Fourier transform infrared spectra; X-ray photoelectron spectra; contamination; cracks; delamination; finite element analysis; integrated circuit bonding; integrated circuit packaging; Auger electron spectroscopy; FTIR; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; bond contamination; cracking; delamination; finite element analysis; power QFN down bond lift; power quad flat no-lead package; shear stress; Bonding; Compounds; Contamination; Delamination; Lead; Stress; Wires; Contamination; Delamination; Down bond lift; FEA modeling; PQFN package;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th

Conference_Location

Singapore

Type

conf

DOI

10.1109/EPTC.2014.7028424

Filename

7028424