Electron emission properties of plasma treated silicon ield emission arrays in gaseous ambient

Author

Gotoh, Y. ; Kojima, T. ; Oowada, A. ; Nagao, M. ; Tsuji, H. ; Ishikawa, J. ; Sakai, S.

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ.

Volume

2

fYear

2006

fDate

25-29 Sept. 2006

Firstpage

865

Lastpage

868

Abstract

The purpose of the present study is to demonstrate the feasibility of plasma treated silicon field emission arrays used as a charge neutralization device in ion implantation system. Silicon field emission arrays (Si-FEAs) were treated in plasma to form carbonized layer. Electron emission properties of the plasma treated Si-FEAs have been measured in various gaseous ambient. The examined gases were hydrogen, oxygen, methane, carbon monoxide and carbon dioxide. Either gas was introduced to the vacuum chamber until the pressure reaches to the partial pressure in the ion implantation system

Keywords

field emitter arrays; plasma immersion ion implantation; Si-FEA; carbon dioxide; carbon monoxide; carbonized layer; charge neutralization device; electron emission properties; gaseous ambient; hydrogen gas; ion implantation system; methane gas; oxygen gas; plasma treated silicon field emission arrays; Carbon dioxide; Electron emission; Gases; Hydrogen; Ion implantation; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum, 2006. ISDEIV '06. International Symposium on

Conference_Location

Matsue

ISSN

1093-2941

Print_ISBN

1-4244-0191-7

Electronic_ISBN

1093-2941

Type

conf

DOI

10.1109/DEIV.2006.357440

Filename

4195021