• DocumentCode
    2529653
  • Title

    Novel single-device “XOR” AND “AND” gates for high speed, very low power LSI mechanical processors

  • Author

    Chowdhury, Faisal K. ; Chappanda, Karumbaiah N. ; Saab, Daniel ; Tabib-Azar, Massood

  • Author_Institution
    Univ. of Utah, Salt Lake City, UT, USA
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    1100
  • Lastpage
    1103
  • Abstract
    We discuss novel functional MEMS/NEMS structures that enable implementation of universal logic gates such as XOR, AND, NAND, NOT, etc. in a single device instead of using 6-14 individual switches used in CMOS. By reducing the number of devices, our approach improves yield, reproducibility and speed and simplifies implementation of circuits such as adders and multiplexers. We show the feasibility of this novel approach through fabrication and testing of XOR, AND and related circuits such as a 2 bit full adder and multiplexer. The XOR gates with ~1.5V turn-on voltage at 50 MHz with >;109 cycles of reliable operations are reported. We also discuss the operation of XOR without deterioration at high temperature and in 90 kW ionizing radiation for 120 minutes.
  • Keywords
    CMOS logic circuits; large scale integration; logic gates; micromechanical devices; multiplexing equipment; nanoelectromechanical devices; testing; AND gate; CMOS; MEMS structure; NEMS structure; XOR gate; adder; frequency 50 MHz; multiplexer; power 90 kW; power LSI mechanical processor; universal logic gate; Adders; Bridge circuits; Electrodes; Logic gates; Silicon; Switches; Tungsten; MEMS logic gate; MEMS microprocessors; MEMS processors; radiation-hard devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
  • Conference_Location
    Beijing
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0157-3
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2011.5969186
  • Filename
    5969186