DocumentCode
2529684
Title
High temperature contact for GaAs solar cells
Author
Reed, B. ; Iles, P. ; Krogen, J.
Author_Institution
Applied Solar Energy Corp., City of Industry, CA, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
450
Abstract
A satisfactory barrier layer system which gives good stability on GaAs cells up to 600°C is presented. For operation in space, the AR coating will have to be modified to give improved `capping´ for the GaAs. Several variations in the structure are tested to show the possibility of balancing the temperature range where high stability is required against the ease and reproducibility of the process sequence
Keywords
III-V semiconductors; electrical contacts; gallium arsenide; semiconductor device testing; solar cells; AR coating; GaAs solar cells; barrier layer system; high temperature contacts; semiconductor device testing; stability; structure; Contacts; Degradation; Erbium; Gallium arsenide; Metallization; Photovoltaic cells; Production equipment; Resistance heating; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169256
Filename
169256
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