DocumentCode
2529758
Title
Poly-Ge near-infrared photodetectors for silicon based optoelectronics
Author
Masini, Gianlorenzo ; Colace, Lorenzo ; Assanto, Gaetano
Author_Institution
Nonlinear Opt. & Optoelectronics Lab., Univ. ´´Roma Tre´´, Roma, Italy
Volume
2
fYear
2003
fDate
29 June-3 July 2003
Firstpage
207
Abstract
In this paper we review the recent achievements of germanium on silicon technologies for the fabrication of near infrared photodetectors.
Keywords
chemical mechanical polishing; elemental semiconductors; germanium; infrared detectors; photodetectors; semiconductor heterojunctions; silicon; vacuum deposition; CMP; Ge; Si; carbon incorporation; critical thickness; dark current density; fabrication; germanium on silicon technologies; graded buffers; heterojunction detectors; lattice mismatch; near infrared photodetectors; polycrystalline germanium; responsivity; seamless integration; silicon based optoelectronics; strained superlattices; surface morphology; Absorption; Germanium alloys; Germanium silicon alloys; Infrared detectors; Lattices; Optical fiber communication; Optical fiber networks; Photodetectors; Semiconductor films; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on
Print_ISBN
0-7803-7816-4
Type
conf
DOI
10.1109/ICTON.2003.1263184
Filename
1263184
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