DocumentCode
2530631
Title
0.6 mu m EPROM cell design based on a new scaling scenario
Author
Yoshikawa, K. ; Mori, S. ; Kaneko, Y. ; Ohshima, Y. ; Arai, N. ; Sakagami, E.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
587
Lastpage
590
Abstract
A novel scaling guideline is proposed for further scaling of EPROM (electrically programmable ROM) cells. Lateral and vertical scaling factors are independently introduced to clarify the scaling effects on cell reliabilities and performances. Based on the proposed scaling scenario, device dimensions and operation voltage designs for 16-Mb EPROM cells are given. 0.6- mu m EPROM cells have been fabricated and the validity of the guideline has been experimentally confirmed.<>
Keywords
EPROM; MOS integrated circuits; integrated memory circuits; 0.6 micron; 16 Mbit; EPROM cell design; cell reliabilities; electrically programmable ROM; operation voltage designs; scaling guideline; vertical scaling factors; EPROM; Electrons; Laboratories; Magnetooptic recording; Microelectronics; Reliability engineering; Semiconductor devices; Stress; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74349
Filename
74349
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