Effect of fringing fields on subthreshold surface potential of channel engineered short channel MOSFETs

An analytical and accurate subthreshold surface potential model for short channel Conventional, LAC & double halo including the effect of inner fringing field is presented, considering the surface potential variation with the depth of the channel depletion layer. With this the drawback of existing models, the assumption of a constant channel depletion layer thickness is removed. A pseudo two dimensional method is adopted and we report a more accurate prediction of the surface potential including the fringing field effect.