• DocumentCode
    2531240
  • Title

    Electrolytic charge inversion at programmable CMOS sensor interfaces

  • Author

    Jayant, Krishna ; Hartman, Mark R. ; Phelps, Joshua B. ; Gordon, Philip H. ; Luo, Dan ; Pollack, Lois ; Kan, Edwin C.

  • Author_Institution
    Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    2098
  • Lastpage
    2101
  • Abstract
    Electrochemical interface layer overcharging is experimentally demonstrated at planar MOS sensor interfaces by controlling the surface charge through nonvolatile charge injection. The electric field across the solid-fluid interface is modulated upon floating-gate program/erase and leads to electrolytic charge reversal, for which an analytical model is derived. This electrofluidic gating effect is further used to repel adsorbed DNA, realizing an electrical surface refreshable biosensor. Quasi-static and impedimetric measurements are presented for validation.
  • Keywords
    CMOS integrated circuits; charge injection; electrolysis; sensors; DNA; electric field; electrical surface refreshable biosensor; electrochemical interface layer overcharging; electrofluidic gating effect; electrolytic charge inversion; electrolytic charge reversal; floating-gate program-erase; impedimetric measurements; nonvolatile charge injection; planar MOS sensor interfaces; programmable CMOS sensor interfaces; quasi-static measurements; solid-fluid interface; Capacitance; DNA; Electric potential; Electrodes; Logic gates; Sensors; Surface impedance; CMOS; Charge inversion; double layer; floating gate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
  • Conference_Location
    Beijing
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0157-3
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2011.5969286
  • Filename
    5969286