DocumentCode
2531240
Title
Electrolytic charge inversion at programmable CMOS sensor interfaces
Author
Jayant, Krishna ; Hartman, Mark R. ; Phelps, Joshua B. ; Gordon, Philip H. ; Luo, Dan ; Pollack, Lois ; Kan, Edwin C.
Author_Institution
Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2011
fDate
5-9 June 2011
Firstpage
2098
Lastpage
2101
Abstract
Electrochemical interface layer overcharging is experimentally demonstrated at planar MOS sensor interfaces by controlling the surface charge through nonvolatile charge injection. The electric field across the solid-fluid interface is modulated upon floating-gate program/erase and leads to electrolytic charge reversal, for which an analytical model is derived. This electrofluidic gating effect is further used to repel adsorbed DNA, realizing an electrical surface refreshable biosensor. Quasi-static and impedimetric measurements are presented for validation.
Keywords
CMOS integrated circuits; charge injection; electrolysis; sensors; DNA; electric field; electrical surface refreshable biosensor; electrochemical interface layer overcharging; electrofluidic gating effect; electrolytic charge inversion; electrolytic charge reversal; floating-gate program-erase; impedimetric measurements; nonvolatile charge injection; planar MOS sensor interfaces; programmable CMOS sensor interfaces; quasi-static measurements; solid-fluid interface; Capacitance; DNA; Electric potential; Electrodes; Logic gates; Sensors; Surface impedance; CMOS; Charge inversion; double layer; floating gate;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location
Beijing
ISSN
Pending
Print_ISBN
978-1-4577-0157-3
Type
conf
DOI
10.1109/TRANSDUCERS.2011.5969286
Filename
5969286
Link To Document