• DocumentCode
    2532310
  • Title

    Growth and properties of high areal density GaxIn1-xP quantum dots on GaP substrate

  • Author

    Gerhard, S. ; Baumann, V. ; Höfling, S. ; Forchel, A.

  • Author_Institution
    Wilhelm Conrad Rontgen Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg, Germany
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    We present high areal density GaxIn1-xP quantum dots grown on GaP substrate by molecular beam epitaxy and report a detailed structural and optical analysis. The composition dependent luminescence is evaluated and linked to the morphology.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; GaInP; GaP; epitaxial growth; molecular beam epitaxy; quantum dots; Atomic force microscopy; Indium phosphide; Luminescence; Molecular beam epitaxial growth; Optical buffering; Optical materials; Photonic band gap; Quantum dots; Scanning electron microscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343094
  • Filename
    5343094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2532310