DocumentCode
2532327
Title
InGaAs high speed communication photodiodes
Author
Achouche, M. ; Glastre, G. ; Caillaud, C. ; Lahrichi, M. ; Carpentier, D.
Author_Institution
III-V Lab., Alcatel-Thales III-V Lab., Marcoussis, France
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
361
Lastpage
362
Abstract
This paper reviews trends in InGaAs based communication photodetectors design. In particular, new avalanche structures using Al(Ga)(In)As large bandgap material used for high sensitivity photoreceivers in access network will be described as well as highly linear uni-travelling-carrier UTC photodiodes, well suited for high bit rates using coherent detection or for analog photonic links.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; photodetectors; AlInAs-InGaAs; InP-InGaAs; access network; analog photonic links; avalanche structures; coherent detection; communication photodetectors; high speed communication photodiodes; highly linear uni-travelling-carrier photodiodes; large bandgap material; photoreceivers; Absorption; Bandwidth; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Optical receivers; Optical waveguides; Photodetectors; Photodiodes; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343096
Filename
5343096
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