• DocumentCode
    2532544
  • Title

    Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures

  • Author

    Sari, Emre ; Nizamoglu, Sedat ; Lee, In-Hwan ; Baek, Jong-Hyeob ; Demir, Hilmi Volkan

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    606
  • Lastpage
    607
  • Abstract
    In conclusion, we studied electric field dependence of radiative recombination lifetime (taur) in polar InGaN/GaN quantum heterostructures. We experimentally and theoretically showed that (taur) decreases with increasing external electric field. As a result of our study, we demonstrated Fermi´s golden rule in polar InGaN/GaN quantum heterostructures.
  • Keywords
    electron-hole recombination; gallium compounds; indium compounds; photoluminescence; wide band gap semiconductors; InGaN-GaN; electric field dependence; polar quantum heterostructures; radiative recombination lifetimes; Charge carrier lifetime; Gallium nitride; Laser excitation; Materials science and technology; Performance evaluation; Photoluminescence; Pulse measurements; Radiative recombination; Steady-state; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343110
  • Filename
    5343110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2532544