Low-temperature APCVD oxide using TEOS-ozone chemistry for multilevel interconnections

Author

Kotani, H. ; Matsuura, M. ; Fujii, A. ; Genjou, H. ; Nagao, S.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

669

Lastpage

672

Abstract

A low-temperature APCVD (atmospheric-pressure chemical vapor deposition) process using TEOS-O/sub 3/ chemistry has been investigated as an interlayer dielectric application technique for multilevel interconnections. The deposition rates depend on the substrate materials, and the oxide films self-planarize the underlying topography, exhibiting smooth flowing profiles of step coverage as deposited. High-quality films can be formed by increasing the deposition temperature and the O/sub 3//TEOS ratio, and much more improvement can be achieved by annealing. This process has been successfully applied to submicron devices.<>

Keywords

chemical vapour deposition; dielectric thin films; integrated circuit technology; oxidation; semiconductor technology; silicon compounds; SiO/sub 2/ films; TEOS-ozone chemistry; annealing; deposition rates; deposition temperature; interlayer dielectric; low temperature APCVD oxide; multilevel interconnections; planarisation; self planarize oxide films; smooth flowing profiles; step coverage; submicron devices; Chemistry; Dielectric materials; Dielectric substrates; Laboratories; Large scale integration; Plasma materials processing; Plasma temperature; Research and development; Semiconductor films; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74368

Filename

74368