DocumentCode
2534264
Title
Plasmon resonances in terahertz photoconductivity
Author
Horing, Norman J Morgenstem
Author_Institution
Dept. of Phys. & Eng. Phys., Stevens Inst. of Technol., Hoboken, NJ, USA
fYear
2004
fDate
16-19 Aug. 2004
Firstpage
368
Lastpage
369
Abstract
A dielectric response mechanism that is nonlinear in an incident THz field is proposed to explain the identity of dc photoconductivity and plasmon resonances in semiconductor nanostructures. The dc photoconductivity resonances match the plasmon resonances in semiconductors based on a nonlinear dynamic screening mechanism; albeit that the dc photoconductance is linear in the source-drain voltage.
Keywords
dielectric function; nanostructured materials; photoconducting materials; photoconductivity; plasmons; semiconductor materials; dc photoconductivity resonances; dielectric response mechanism; nonlinear dynamic screening mechanism; plasmon resonances; semiconductor nanostructures; terahertz photoconductivity; Dielectrics; Frequency; Photoconductivity; Physics; Plasma sources; Plasma waves; Plasmons; Polarization; Resonance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN
0-7803-8536-5
Type
conf
DOI
10.1109/NANO.2004.1392353
Filename
1392353
Link To Document