A wafer-level poly-sige-based thin film packaging technology demonstrated on a soi-based high-Q MEM resonator

Author

Helin, Ph ; Verbist, A. ; De Coster, J. ; Guo, B. ; Severi, S. ; Witvrouw, A. ; Haspeslagh, L. ; Tilmans, H.A.C. ; Naito, Y. ; Nakamura, K. ; Onishi, K.

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

5-9 June 2011

Firstpage

982

Lastpage

985

Abstract

This paper reports a 0-level or wafer-level thin film packaging technology for MEMS using polycrystalline silicon-germanium (poly-SiGe) as the base material complemented with a metal seal. Hermetic packages with a cavity pressure below 0.3mbar are demonstrated on a SOI-based torsional-mode Si resonator. Monitoring the quality factor of these resonators revealed that the low pressure is retained for over 6 months while storing at ambient pressure and room temperature. Moreover, the package survived several months under harsh testing conditions with temperatures up to 125°C and 85% relative humidity. This thin film SiGe-based technology has large potential for the on-wafer packaging of a broad range of MEMS devices.

Keywords

Ge-Si alloys; Q-factor; hermetic seals; micromechanical resonators; reliability; testing; thin films; wafer level packaging; SOI based high-Q MEMs resonator; SiGe; harsh testing condition; hermetic package; metal seal; quality factor; wafer level thin film packaging technology; Electrodes; Finishing; Micromechanical devices; Monitoring; Packaging; Testing; 0-level thin film package; CMOS-MEMS; MEM resonator; poly-SiGe; reliabity testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969486

Filename

5969486