DocumentCode
2535139
Title
Proposal of Ge/SiGe five-layer asymmetric coupled quantum well for mach-zehnder modulators
Author
Iseri, Yuji ; Arakawa, Taro ; Tada, Kunio ; Haneji, Nobuo
Author_Institution
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
307
Lastpage
308
Abstract
A Ge/SiGe five-layer asymmetric coupled quantum well (FACQW) for optical modulators based on phase modulation is proposed and theoretically analyzed. The FACQW is expected to exhibit large electrorefractive index change comparable to InGaAs/InAlAs FACQW.
Keywords
Ge-Si alloys; optical modulation; phase modulation; refractive index; semiconductor quantum wells; Ge-SiGe; Mach-Zehnder modulators; asymmetric coupled quantum well; electrorefractive index; optical modulators; phase modulation; Absorption; Germanium silicon alloys; High speed optical techniques; Indium compounds; Indium gallium arsenide; Optical interconnections; Optical modulation; Phase modulation; Proposals; Silicon germanium; Germanium; Mach-Zehnder modulator; electrorefractive effect; quantum confined Stark effect;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343248
Filename
5343248
Link To Document