• DocumentCode
    2535935
  • Title

    Dark current mechanisms in InxGa1-xAs1-yNy

  • Author

    Tan, L.J.J. ; Soong, W.S. ; Tan, S.L. ; Goh, Y.L. ; Steer, M.J. ; Ng, J.S. ; David, J.P.R. ; Marko, I.P. ; Chamings, J. ; Allam, J. ; Sweeney, S.J. ; Adams, A.R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    233
  • Lastpage
    234
  • Abstract
    In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.
  • Keywords
    III-V semiconductors; indium compounds; photodetectors; InGaAsN; dark current mechanisms; optical telecommunication wavelengths; photo response; photodetectors; photovoltaic applications; Dark current; Diodes; Gallium arsenide; Lattices; Optical materials; Photodetectors; Photodiodes; Photonic band gap; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343290
  • Filename
    5343290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2535935