DocumentCode
2535959
Title
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Author
Bütün, Serkan ; Gökkavas, Mutlu ; Yu, HongBo ; Strupinski, Vlodek ; Özbay, Ekmel
Author_Institution
Nanoteknoloji Arastima Merkezi, Bilkent Univ., Ankara, Turkey
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
236
Lastpage
237
Abstract
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates.
Keywords
III-V semiconductors; gallium compounds; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; GaN; SiC; dark current reduction; epitaxially thick templates; metal-semiconductor-metal photodetectors; semiinsulating templates; ultraviolet photodetectors; wide band gap semiconductors; Chemical vapor deposition; Dark current; Epitaxial growth; Gallium nitride; Lighting; Materials science and technology; Organic chemicals; Photodetectors; Silicon carbide; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343292
Filename
5343292
Link To Document