DocumentCode
2536261
Title
Equipment modeling for plasma etch process using artificial neural network
Author
Thammano, Arit
Author_Institution
Fac. of Inf. Technol., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
fYear
1998
fDate
24-27 Nov 1998
Firstpage
659
Lastpage
662
Abstract
Nowadays, more and more electronic and communication devices have been introduced to the consumer. Those gadgets, such as cellular phone, fax, modem, computers, etc., have made our life easier and more comfortable. However, at the backdrop of the development of those facilities, the burden is on the engineers who fabricate those specialized chips, each of which has its own features, characteristics, and electrical properties. Inevitably, it is the job of those engineers, who particularly are in process development groups, to search for the best and most cost-effective among different and various ways and means to fabricate those chips. With a specific look at the wafer fabrication, it is evident that the process development is a very costly activity. Therefore, in this study, the artificial neural network (with help from a genetic algorithm) is introduced as an alternative simulation technique, which can help process engineers reduce the development time and cost
Keywords
digital simulation; genetic algorithms; neural nets; semiconductor process modelling; sputter etching; artificial neural network; development time; genetic algorithm; plasma etch process; simulation technique; wafer fabrication; Artificial neural networks; Cellular phones; Costs; Etching; Fabrication; Genetic algorithms; Genetic engineering; Modems; Plasma applications; Plasma devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location
Chiangmai
Print_ISBN
0-7803-5146-0
Type
conf
DOI
10.1109/APCCAS.1998.743907
Filename
743907
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