DocumentCode
2537005
Title
Plasma nonlinearities and terahertz detection by Field Effect Transistors
Author
Knap, Wojciech ; Coquillat, Dominique ; Dyakonova, N. ; Klimenko, O. ; But, D. ; Teppe, F. ; Sakowicz, M. ; Lusakowski, J. ; Otsuji, Taiichi
Author_Institution
TERALAB, Univ. Montpellier 2 Montpellier, Montpellier, France
Volume
1
fYear
2012
fDate
21-23 May 2012
Firstpage
108
Lastpage
111
Abstract
On overview of recent results concerning the plasma excitations in Field Effect Transistor is presented. We report on high magnetic field studies and we show evidences that the plasma waves are indeed propagating in the transistor channel. We show also how FET based THz detectors parameters can be determined using the static current voltage characteristics. The role of loading effects and temperature to enhance the THz responsivity is also demonstrated.
Keywords
field effect transistors; millimetre wave detectors; THz detectors; field effect transistors; high magnetic field studies; loading effects; plasma excitations; plasma nonlinearities; plasma waves; static current voltage characteristics; terahertz detection; transistor channel; Decision support systems; High electron mobility transistors; plasma waves; semiconductors; terahertz wave detection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location
Warsaw
Print_ISBN
978-1-4577-1435-1
Type
conf
DOI
10.1109/MIKON.2012.6233505
Filename
6233505
Link To Document