100 W highly efficient octave bandwidth GaN-HEMT power amplifier

In this contribution, the design, implementation, and experimental results of a high-efficiency broadband GaN HEMT power amplifier are presented. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design bandwidth. A systematic approach was applied for the design of wideband output and input matching networks. Continuous wave (CW) large-signal measurement results showed that across 1.1-2.0 GHz (58 % bandwidth), the output power was higher than 110 W, and 50-72% drain efficiency was achieved. Over the octave bandwidth of 1.0-2.0 GHz, at least 84 W output power was measured. The power gain was around 12 dB. An ACLR of -45 dBc was measured for an LTE signal at 42 dBm average output power under additional digital predistortion (DPD).