A single-chip 2.4GHz double cascode power amplifier with switched programmable feedback biasing under multiple supply voltages in 65nm CMOS for WLAN application

Author

Li, Mingyuan ; Afsahi, Ali ; Behzad, Arya

Author_Institution

Broadcom Corp., San Diego, CA, USA

fYear

2010

fDate

23-25 May 2010

Firstpage

391

Lastpage

394

Abstract

A 2.4GHz fully integrated power amplifier with an on-chip balun for embedded WLAN applications with direct battery connection (2.3-5.5V) is presented. With a switched programmable feedback bias network, the PA can deliver 23.5dBm to 28.4dBm CW saturated power and 18.2dBm to 23.2dBm OFDM linear power (-25dB EVM) with PAPD when the supply varies from 2.3V to 5.5V. The PA occupies 1.2mm² in 65nm CMOS.

Keywords

CMOS integrated circuits; OFDM modulation; UHF power amplifiers; baluns; microprocessor chips; wireless LAN; CMOS process; OFDM linear power; direct battery connection; double cascode power amplifier; embedded WLAN application; frequency 2.4 GHz; fully integrated power amplifier; on-chip balun; single-chip; size 65 nm; switched programmable feedback biasing; voltage 2.3 V to 5.5 V; Batteries; CMOS technology; Degradation; Feedback; Impedance matching; OFDM; Power amplifiers; Regulators; Voltage; Wireless LAN; CMOS; OFDM; WLAN; linearization; power amplifiers; stacked transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477302

Filename

5477302