DocumentCode
2539414
Title
Vacuum arc deposition: early history and recent developments
Author
Boxman, Raymond L.
Author_Institution
Lab. of Electr. Discharge & Plasma, Tel Aviv Univ., Israel
Volume
1
fYear
2000
fDate
2000
Firstpage
1
Abstract
Vacuum arc deposition (VAD) was first investigated at the end of the 19th Century by A.W. Wright and T.A. Edison as mirror coatings and seed layers for phonogram replication molds, respectively. The early research anticipated later developments, including cathode shielding, multi-layer coatings, substrate motion, and hybrid processing. VAD has become an established industrial art for producing hard, wear-resistant and decorative coatings. Sophisticated coatings, including tertiary compounds and multi-layers, are increasingly used. Filtered vacuum arc deposition and hot electrode vacuum arcs are increasingly investigated to obtain high-quality, macroparticle-free films. Improved filtered sources, including large rectangular filters, have been demonstrated. Besides tool coatings, films for metallizing integrated circuits and protecting magnetic media are being developed
Keywords
cathodes; decorative coatings; history; integrated circuits; metallisation; vacuum arcs; vacuum deposited coatings; vacuum deposition; wear resistant coatings; cathode shielding; decorative coatings; filtered sources; filtered vacuum arc deposition; hard wear-resistant coatings; high-quality macroparticle-free films; history; hot electrode vacuum arcs; hybrid processing; integrated circuits metallisation; magnetic media protection; mirror coatings; multi-layer coatings; multi-layers; phonogram replication molds; rectangular filters; seed layers; substrate motion; tertiary compounds; tool coatings; vacuum arc deposition; Art; Cathodes; Coatings; Electrodes; Filters; History; Magnetic films; Magnetic separation; Mirrors; Vacuum arcs;
fLanguage
English
Publisher
ieee
Conference_Titel
Discharges and Electrical Insulation in Vacuum, 2000. Proceedings. ISDEIV. XIXth International Symposium on
Conference_Location
Xi´an
Print_ISBN
0-7803-5791-4
Type
conf
DOI
10.1109/DEIV.2000.877236
Filename
877236
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