• DocumentCode
    2539434
  • Title

    Design and progress of a wideband 120–210 GHz low noise amplifier

  • Author

    Eskanadri, Sina ; Hamedani, Farzad Tavakkol

  • Author_Institution
    Commun. Dept., Semnan Univ., Semnan, Iran
  • Volume
    2
  • fYear
    2012
  • fDate
    21-23 May 2012
  • Firstpage
    757
  • Lastpage
    760
  • Abstract
    In order to further improve the sensitivity and resolution of radiometer front-ends and also astronomy applications, amplifiers are needed with the lowest noise figure and high flat gain in G-band frequency range. Hence, we designed and demonstrated a MMIC LNA using Agilent EEHEMT model of 0.07 μm InP HEMT for operating at 120-210 GHz frequency broadband range. Simulation results illustrate smooth gain greater than 23 dB and noise figure about 1.5 dB across the bandwidth at 290 K according to IEEE standard ambient temperature. Input and output return losses are greater than 10 dB and LNA is unconditionally stable at its operating frequency range. Validation of performance for designed MMIC LNA was investigated from many aspects by simulation and measurement results which were done for MMICs InP HEMT technology during last years.
  • Keywords
    MMIC amplifiers; indium compounds; low noise amplifiers; wideband amplifiers; InP; MMIC LNA; astronomy applications; frequency 120 GHz to 210 GHz; radiometer front-ends; resolution; sensitivity; wideband low noise amplifier; Gain; HEMTs; Indium phosphide; Logic gates; MMICs; Mathematical model; Noise figure; EEHEMT nonlinear model; InP HEMT; Low Noise Amplifier; Monolithic Millimeter wave Integrated Circuits (MMICs);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
  • Conference_Location
    Warsaw
  • Print_ISBN
    978-1-4577-1435-1
  • Type

    conf

  • DOI
    10.1109/MIKON.2012.6233630
  • Filename
    6233630